Semiconductors

  We are specialized in the exporting of Chinese products. Our products mainly include transistors, thyristors, rectifiers (diodes), solid state relay (SSR), SCR modules, rectifier modules, power modules, IGBT, SGV series AC phase-shift and voltage regulating module, SGV series rectifying and voltage regulating modules, generators, electronics furnace, welder and welding machines.

silicon wafer1. FGD:In the process of pulling crystal with float-zone method, add the gas impurities by making use of its diffusion performance. The purpose of controlling the reisitivity can be reached by controlling the content of the impurities and the flow of gas. This Kind of crystal is usually used to produce semiconductor power device highly-efficient Sun-power Battery.2.NTD FZ silicon: After neurondoping process, part of silicon atom of no doping Highpurity FZ monocrystalline silicon transfer to phosphorus atom, so that high level of average distribution of doping atoms becomes true. Such method highly improves valid utilization ratio of monocrystalline silicon material. Due to good RRV, the function of monocrystalline silicon was highly improved and finished products ratio & high-class products ratio of devices is well guaranteed. It is mainly used for power IC devices and sorts of new type of electric power & electronics devices.variety    &nb

silicon wafer1. FGD:In the process of pulling crystal with float-zone method, add the gas impurities by making use of its diffusion performance. The purpose of controlling the reisitivity can be reached by controlling the content of the impurities and the flow of gas. This Kind of crystal is usually used to produce semiconductor power device highly-efficient Sun-power Battery.2.NTD FZ silicon: After neurondoping process, part of silicon atom of no doping Highpurity FZ monocrystalline silicon transfer to phosphorus atom, so that high level of average distribution of doping atoms becomes true. Such method highly improves valid utilization ratio of monocrystalline silicon material. Due to good RRV, the function of monocrystalline silicon was highly improved and finished products ratio & high-class products ratio of devices is well guaranteed. It is mainly used for power IC devices and sorts of new type of electric power & electronics devices.variety    &nb

silicon wafer1. FGD:In the process of pulling crystal with float-zone method, add the gas impurities by making use of its diffusion performance. The purpose of controlling the reisitivity can be reached by controlling the content of the impurities and the flow of gas. This Kind of crystal is usually used to produce semiconductor power device highly-efficient Sun-power Battery.2.NTD FZ silicon: After neurondoping process, part of silicon atom of no doping Highpurity FZ monocrystalline silicon transfer to phosphorus atom, so that high level of average distribution of doping atoms becomes true. Such method highly improves valid utilization ratio of monocrystalline silicon material. Due to good RRV, the function of monocrystalline silicon was highly improved and finished products ratio & high-class products ratio of devices is well guaranteed. It is mainly used for power IC devices and sorts of new type of electric power & electronics devices.variety    &nb

silicon wafer1. FGD:In the process of pulling crystal with float-zone method, add the gas impurities by making use of its diffusion performance. The purpose of controlling the reisitivity can be reached by controlling the content of the impurities and the flow of gas. This Kind of crystal is usually used to produce semiconductor power device highly-efficient Sun-power Battery.2.NTD FZ silicon: After neurondoping process, part of silicon atom of no doping Highpurity FZ monocrystalline silicon transfer to phosphorus atom, so that high level of average distribution of doping atoms becomes true. Such method highly improves valid utilization ratio of monocrystalline silicon material. Due to good RRV, the function of monocrystalline silicon was highly improved and finished products ratio & high-class products ratio of devices is well guaranteed. It is mainly used for power IC devices and sorts of new type of electric power & electronics devices.variety    &nb

silicon wafer1. FGD:In the process of pulling crystal with float-zone method, add the gas impurities by making use of its diffusion performance. The purpose of controlling the reisitivity can be reached by controlling the content of the impurities and the flow of gas. This Kind of crystal is usually used to produce semiconductor power device highly-efficient Sun-power Battery.2.NTD FZ silicon: After neurondoping process, part of silicon atom of no doping Highpurity FZ monocrystalline silicon transfer to phosphorus atom, so that high level of average distribution of doping atoms becomes true. Such method highly improves valid utilization ratio of monocrystalline silicon material. Due to good RRV, the function of monocrystalline silicon was highly improved and finished products ratio & high-class products ratio of devices is well guaranteed. It is mainly used for power IC devices and sorts of new type of electric power & electronics devices.variety    &nb

 PARAMETERMINTYPMAXUNITCONDITIONOPERATING CONDITIONS:Operating temperature range-40+85Operating supply voltage5VCURRENT CONSUMPTIONCurrent consumption RX,433 MHz16.0mAWithout LEDCurrent consumption TX (+10 dBm),433 MHz26.0mAWithout LEDStandby Current consumption10uARF CHARACTERISTICSFrequency range915MHzData rate (programmable)1.210kbps1.2~500 kbps PreprogramOutput power (programmable)-30+10dBmFSKSensitivity,1.2 kbps-110dBmSensitivity,250 kbps-88dBm

MFB - NTC thermistors is manganese oxide as the main raw material production of fineceramic semiconductor electronic components. Resistance value as a functionof temperature is nonlinear changes in resistance with temperature increase of smaller,with lower temperature and growing. Using this characteristic, usually usedfor crystal temperature compensation and temperature control and temperaturemeasurement. 1. Product Features Glass Packaging, heat, high stability Small size, high precision, good interoperability 2. Use products Air conditioners, refrigerators temperature control Various electronic thermometer, the thermometer Motors, fans Temperature Monitoring Various medical and healthcare products in the temperature measurement and controlMotor oil-Detection Alarm Other types of measuring the temperature measurement and control equipment

Our power semiconductors are main substitutes for those of Semikron, Eupec, IRF,Fujielectric, IXYS, and other brands. Compared with them, our semiconductors haveboth sound quality and competitive price. And we can also ensure professionalservice. We have a wide range of products, including recovery diodes, phase control thyristors, bi-directional triode thyristors, inverter grade thyristors, bridge rectifiers and thyristor/diode modules.

Silicone Rubber Thermally Conductive Insulation Pad has an ideal filler blend that gives low-modulus characteristic that maintains optimal thermal performance yet still allows for easy handling. The natural tack on both sides of the material allows for good compliance to adjacent surfaces of components, minimizing interfacial resistance. Application: Computer and peripherals ·Telecommunications ·Power conversion ·RDRAMTM memory modules/chip scale packages ·Area where heat needs to be transferred to a frame, ·chassis, or other type of heat spreader Specification: Thickness 0.5.mm1mm1.5mm2mm2.5mm3.0mm3.5mm4.0mm4.5mm.5.0mm. Note: color and back adhesive can be optional by customers. Application: it can be applied in a variety kind of electronics for heat radiation and insulation, such as: CD-ROM, computer, power supplier, LED etc. Physical Property Unit Data Test Way Thickness mm 0.5-5 ASTMD374 Specific Gravity

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1)Breakdown Voltage VBR Volts Min.:6.4-209.0 2)Breakdown voltage VBR Volts Max.:7.30-231.0 3)Stand-off Voltage:5-188 4)Package Type:SMA/DO-214AC,SMB/DO-214AA,SMC/DO-214AB 5)Part Number: SMAJ5.0A/CA~SMAJ220A/CA, SMBJ5.0A/CA~SMBJ220A/CA, SMCJ5.0A/CA~SMCJ220A/CA

1)Type:P4KE6.8~P4KE220A,P6KE6.8~P6KE220A P15KE6.8~P15KE220A 2)Package Type: P4KE6.8~P4KE220A:DO-41, P6KE6.8~P6KE220A:DO-15, P15KE6.8~P15KE220A:DO-201AE

P16-2R1G1B waterproofed cabinet with quick lock system, easy and convenient for shipment and installation. Ideal products for rental, with best quality and low price. Please contact us for more info, thanks.

We are top 3 professional OEM/ODM LED Display Manufacturer in China. We are manufacturer and engineering service of Beijing 2008 Olympic Games for "Bird Nest" &" Water Cubic" LED display project, have 13 years experience in manufacturing and engineering in area of outdoor, indoor, semi-outdoor Fullcolor LED Display . Outdoor and Indoor LED DIsplay widely used in Indooer swimming hall, ice hall, stadium, school, government, financila, library etc. Outdoor display can synchronously display kinds of text, picture, graphics, signs, flashes, video Detailed Product Description Each pixel contains one red, one pure green, blue and total four pieces of LEDs Pitch: 10mm 12mm 14mm 16mm 20mm 25mm 31.25mm, 40mm etc Unit module size: P10:80mm x 80mm P12:192mm x 96mm P14:224mm x 112mm P16:256mm x 128mm P20:320mm x 160mm P25:200mm x 200mm Display brightness: 4000cd/m2 -7000cd/m2 Brightness adjustment: 256 grade manual and eight grade automatic Protec

Name : 4.8mm hat LED Origin: made in China Brand : Gaopin

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Name : 4.8mm helmet LED Origin: made in China Brand : Gaopin