silicon wafer1. FGD:In the process of pulling crystal with float-zone method, add the gas impurities by making use of its diffusion performance. The purpose of controlling the reisitivity can be reached by controlling the content of the impurities and the flow of gas. This Kind of crystal is usually used to produce semiconductor power device highly-efficient Sun-power Battery.2.NTD FZ silicon: After neurondoping process, part of silicon atom of no doping Highpurity FZ monocrystalline silicon transfer to phosphorus atom, so that high level of average distribution of doping atoms becomes true. Such method highly improves valid utilization ratio of monocrystalline silicon material. Due to good RRV, the function of monocrystalline silicon was highly improved and finished products ratio & high-class products ratio of devices is well guaranteed. It is mainly used for power IC devices and sorts of new type of electric power & electronics devices.variety    &nb

silicon wafer1. FGD:In the process of pulling crystal with float-zone method, add the gas impurities by making use of its diffusion performance. The purpose of controlling the reisitivity can be reached by controlling the content of the impurities and the flow of gas. This Kind of crystal is usually used to produce semiconductor power device highly-efficient Sun-power Battery.2.NTD FZ silicon: After neurondoping process, part of silicon atom of no doping Highpurity FZ monocrystalline silicon transfer to phosphorus atom, so that high level of average distribution of doping atoms becomes true. Such method highly improves valid utilization ratio of monocrystalline silicon material. Due to good RRV, the function of monocrystalline silicon was highly improved and finished products ratio & high-class products ratio of devices is well guaranteed. It is mainly used for power IC devices and sorts of new type of electric power & electronics devices.variety    &nb

silicon wafer1. FGD:In the process of pulling crystal with float-zone method, add the gas impurities by making use of its diffusion performance. The purpose of controlling the reisitivity can be reached by controlling the content of the impurities and the flow of gas. This Kind of crystal is usually used to produce semiconductor power device highly-efficient Sun-power Battery.2.NTD FZ silicon: After neurondoping process, part of silicon atom of no doping Highpurity FZ monocrystalline silicon transfer to phosphorus atom, so that high level of average distribution of doping atoms becomes true. Such method highly improves valid utilization ratio of monocrystalline silicon material. Due to good RRV, the function of monocrystalline silicon was highly improved and finished products ratio & high-class products ratio of devices is well guaranteed. It is mainly used for power IC devices and sorts of new type of electric power & electronics devices.variety    &nb

silicon wafer1. FGD:In the process of pulling crystal with float-zone method, add the gas impurities by making use of its diffusion performance. The purpose of controlling the reisitivity can be reached by controlling the content of the impurities and the flow of gas. This Kind of crystal is usually used to produce semiconductor power device highly-efficient Sun-power Battery.2.NTD FZ silicon: After neurondoping process, part of silicon atom of no doping Highpurity FZ monocrystalline silicon transfer to phosphorus atom, so that high level of average distribution of doping atoms becomes true. Such method highly improves valid utilization ratio of monocrystalline silicon material. Due to good RRV, the function of monocrystalline silicon was highly improved and finished products ratio & high-class products ratio of devices is well guaranteed. It is mainly used for power IC devices and sorts of new type of electric power & electronics devices.variety    &nb