Cadmium Zinc Telluride (CZT) Zn percentage 3.5±0.5% atom, EPD: <5×10E4cm-2 Transmission 2-20µm >55% Orientation <111> +/-0.25°. DCDM-FWHM<50 aresec .No Splits. Dimensions (40.0 x30.0 x 0.95)+/-0.05mm Parallelism <10µm Surface Side A Mechanically polished Surface Side B Chemically polished Edges No edge bevel.

Cadmium Telluride (CdTe) Polycrystalline 99.999% Impurity PPM Max each (ICP-MS) Zn/Si 0.6, Pb=0.8, Al=1.0, Ag/Cu/Mg/Ni/As/Fe/Bi/Sb 0.5 Size 3-8mm irregular lump Packed in composite aluminum bag

Gallium Arsenide (GaAs) Wafer Un-doped Semi-insulating 2” 3” Conduct Type N, VGF growth, EPI-Ready Diameter 50.8±0.2 mm, 76.2±0.3 mm Thickness350±25µm, 625+/-25um Orientation (100)0±0.50 Primary Flat EJ [0-1-1] ±0.50 Length16±1 mm, 22±2mm Secondary Flat EJ [0 -1 1] ±0.50 length7±1mm, 12±2mm Resistivity >1×107 Ohm.cm Mobility>5000 cm2/v.s EPD<10000 /cm2 TTV/BOW/Warp =10µm for 2”, =15µm for 3” Edge0.25 mmR, Surface P/P Single wafer packing, carton box outside.

Gallium Arsenide (GaAs) Wafer Zn-Doped 2” 3” 4” Conduct Type SC/P, EPI-Ready Diameter Ø50.8± 0.2, 76.2 ± 0.2, 100 ±0.3mm Orientation (100) 2°±0.5° to (110); a=45° Thickness 350±25um, 625±25um Primary Flat EJ [0 -1 -1] Length 16+/-2m, 22+/-2 mm Secondary Flat EJ [0 1 -1] Length 8+/-1mm,16+/-2mm Carrier Concentration 2-8x1018cm-3for 2”, 3-50x1018cm-3 for 3” Resistivity Standard, Mobility Standard EPD = 2000/cm2 for 2”, = 10,000/cm2 for 3” Surface P/E , TTV=15µm Single wafer packing, carton box outside

Gallium Arsenide (GaAs) Wafer Si-Doped 2” 3” 4” Conduct Type S-C-N , VGF growth, EPI-Ready Diameter Ø50.7 ± 0.2, 76.2±0.3, 100±0.3 Orientation (100)0±0.50 Thickness 350±25um, 625±25um Primary Flat EJ [0 -1 -1] ±0.50 Length 16+/-1mm, 22+/-2 mm Secondary Flat EJ [0 1 -1] ±0.50 Length 8+/-1mm,16+/-2mm Carrier Concentration 0.4E18-4E18 /cm3for 2”, 1-2.0×1017 for 3” Resistivity 0.8E-3~ 9E-3 Ohm.cm for 3”, 0.05-0.005 Ohm.cm for 3” Mobility>1000 cm2/v.s for 2”, 2000-3500 cm2/v.s for 3” EPD = 1000/cm2 for 2”, = 10,000/cm2 for 3” Surface P/E, TTV=10µm, Particle Count <50 (>0.3µm) Single wafer packing, carton box outside

NTD Single Crystal Silicon Wafer 2” 3” Neutron Transmutation Doping (NTD) silicon single crystal FZ N<111> 50.8+/-0.1, 76.2+/-0.2mm Thickness 356+/-10, 673+/-10um Resisitivity 42-50, 40-180 ohm-cm RRV <=8%, BOW<=30 , Flat SEMI STD Lapped FO-800 (JIS Standard)- corundum as grinding medium . 25pcs in one cassette, carton box outside.

Single Crystal Silicon Wafer 4” (Prime wafer or Test wafer) Dia. 100+/-0.3mm P/E Lapped or Cutted CZ N/Phos N/Phos, P/Boron, N/Arsenic, N/Antimony Orientation <100>, <111>, <110>+/-1º Resistivity (O-cm) 2-4, 4.0-7.0, 7.5-12.5 Thickness 350+/-15 420+/-20 525+/-20µm PF <110>+/-1º Length 32.5+/-2.5mm, SF 18.0+/-2.0mm RRV =<12%, TTV ?15µm, TIR?10µm, Bow /Warp ?40µm max 2” 3” 4’ Lapped, As-cut and Polished wafer available. 25pcs in one cassette, carton box outside

Molybdenum Rod/ Square Bar/ Plate/Foil/Pipe 1) Molybdenum Rod Dia.3.0-16.0mm (swaged) X 400mm Dia.0.8-3.0mm (Straightened)X1000mm Dia.0.8-12mm(Ground)x300-1000mm Dia.2.0-15mm X 1,300-100,000mm Dia.16-23x300-450mm 2) Square Bar for electrode, manufacturing, and as alloy additive (17-19) x (17-19) x(300-650)mm 12-20x12-20x500-530mm, 3) Plate/Foil/Pipe are available upon request.

Molybdenum Tungsten Alloy Wire/Rod MoW50 Mo 50+/-1%, W balance, MoW20 Mo 80+/-1%,W balance 1. Rod for heating element, cathode filament and other components. Swaged Dia.3.0-11.0mm X 300-1000mm Straightened Dia.0.8-3.0mm x 600-1000m 2. Wire Dia.30-800um For thermo-conductive wire, spark profile cutting wire and other components.

Molybdenum Wire/White Molybdenum Wire/Spray Molybdenum Wire 1) Moly Wire Dia.0.041-2.00mm Mo 99.95%min 2) White Moly Wire Dia.0.151-1.00mm Mo 99.95%min Dia.0.08-0.6mm Mo99.93%min 3) Spray Moly Wire Dia.1.41-3.18mm Mo 99.95%min In plastic barrel , carton box outside.

Tungsten Wire/ White Tungsten Wire/ Tungsten Stranded Wire 1) Tungsten Wire for filament, grid, cathod, folded and stranded wire, heat-element wire Dia.5-1800um W 99.95%min 2) White (cleaned) Tungsten Wire for Filaments: Dia.30-300um W 99.92%min 3) Tungsten Stranded Wire Heater element: W 99.92%min; 99.95%min Diameter of Single wire: 0.3-0.8mm No. of Strand: 2-4 Diameter of main wire: 0.8-1.1mm Diameter of Aux wire: 0.43-0.5mm No. of Aux wire:1-3

Tungsten Granule / Tungsten-Base high Density Alloy 1) Tungsten Granule W 99.5%min Grey Polyhedral Granule. C 0.001%max S 0.001%max 1.650-0.830mm(-10--+20)mesh, 0.830-0.365mm(-20--+40)mesh 0.365-0.245mm(-40--+60)mesh, 0.245-0.175mm(-60--+80)mesh Used as flux for C-S analysis. 2.5kgs in iron drum 2) Tungsten-Base High Density Alloy Based on W, added with appropriate Fe,Ni,Cu,Mn,Co. Density.18.0g/cm3 Tensile Strength; 780N/mm2 min, Hardness (HRC).25 Elongation,3% Impact Toughness 9.8j/cm2

Tungsten Carbide ball-Cemented Carbide Ball Application: Grinding medium and Valve Core Cobalt Content Co 6%, 8% Diameter Dia.5.0, 6.35, 10.2, 12.2, 15.2, 20, 30mm Hardness 91.7HRA TRS 2370N/mm2 Density14.85 g/cm3 Porosity A02 B02 C00

Tungsten Carbide Pellet/Cemented Carbide Pellet WC /CO+Ni: 85 /14-15 , 90/9.5-10, 93/6.5-7, 96.0-96.5/3.5-4 WC/Fe+Ni : 93/6-7, 96.5-97.0/3-4 WC/Co: 85/14-15, 90/9.5-10, 93/6.5-7, 95.5-96.5/3.5-4, 90.5/8.9-9.5, 91.5/7.7-8.3 Size(Mesh) 10-20, 14-20, 20-30, 30-40,40-60 Used as the starting material for production of cemented carbides 50kgs iron drum with plastic bag inside

Tungsten Titanium Carbide (W,Ti)C (Cubic Tungsten Carbide) WC:TiC=50:50 W( Ca )46.5%,Ti( Ca) 40.0%, T. C 12.5+/-0.2% C.C 0.5 %max F.C12.0% min WC:TiC=70:30 W( Ca) 65.5% Ti( Ca) 24.3% T.C 10.0+/-0.3% C.C 0.5% max F.C 9.5%min FSSS 2-5um Used as the starting material for production of cemented carbides 50kgs iron drum with plastic bag inside

Ammonium Molybdate Mo 56%min (NH4)2Mo2O7 Impurity Max each Si/Fe/Mg/Al/Pb 0.0006%, Mn/Cu/Ni 0.0003%, K 0.01%, Na 0.001%, P/Sn 0.0005%, Ca 0.0008% Bulk density 0.91-1.35g/cm3 Size FSSS 40-70micron 25kgs PP woven bag or 50kgs iron drum with plastic bag inside.

Lithium Hydroxide 1. Industry Grade Lithium Hydroxide LiOH.H2O 56.5% Min Na 0.005%, K 0.02%, Fe203 0.003%, CO2- 0.5%, SO4 2- 0.015%, CL- 0.002% Insoluble (HCL) 0.01% Size: usually 30-40mesh, 200mesh 2. Small Particle Lithium Hydroxide LiOH.H2O 56.5% Min Na 0.005% max, Ca 0.02% max, Fe 0.002% max, SO42- 0.01% max, Cl- 0.002% max, CO2 0.35% max, Size: D50=10µm 3. High Purity Grade Lithium Hydroxide LiOH.H2O 55.5% min Na/K/Ca/Mg 0.0008%each, Fe/Cu/Al 0.0005% each, Si 0.0050%, CO2 0.35% Size: D50=50µm Double plastic bag protected by Kraft paper bag, 25kg net weight

Zinc Borate 2ZnO.3 B2O3.3.5H2O ZnO 37.5±1.0%, H2O 14.5±0.5%, B2O3 48.0±1.0% Pb 0.03%, Fe/As 0.06% each, Residues on 325mesh 0.05% Size: F.S.S.S 1~2um/2~5um/6~10um/10~15um ZB-500 2ZnO.3B2O3 ZnO 43.55+/-0.55, B2O3 55.5+/-1.0% As 0.006%, Fe 0.01%, Pb 0.03%, Residue on 325mesh 0.05% max Average particle Size 2-5um 25kgs cardboard barrel with plastic bag inside.

Nickel and Nickel Alloy Wire/Strip/Sleeves 1) Nickel and Nickel Alloy Wire Nickel Wire (Ni+Co 99.5%max), Ni-Co alloy Wire(Co 38-42%), Ni-Mn alloy Wire(Mn 2.3-3.3%) Dia.0.10-0.39,0.40-1.10,1.11-2.00,2.01-4.00mm 2) Nickel and Nickle Alloy Strips Nickel Strip (Ni+Co 99.5%min), Ni-Mg-Si Alloy (Ni+Co 99.7%min Si 0.04-0.07%) Ni-Mg Alloy(Ni+Co 99.6%min,Mg 0.04-0.14%), Ni-Si Alloy(Ni+Co 99.4%min,Si 0.15-0.25%), Ni-W-Mg Alloy(Mg 0.02-0.15%,W 3.5-4.5%,Balance Ni) Thicknee.0.05-2.00mm 3) Nickel and Nickel Alloy Sleeves Ni Sleeve (Ni+Co 99.5%min), Ni-Mg-Si Alloy (Ni+Co 99.75min Mg/Si 0.04-0.07%each) Ni-Si Alloy (Ni+Co 99.4%min Si 0.15-0.25%), Ni-W-Mg Alloy(Mg 0.05-0.15%, W3.5-4.5%, Balance Ni) Out Diameter 0.40-5.0, Wall Thickness 0.05-0.25